Spin-injection device based on EuS magnetic tunnel barriers

نویسندگان

  • A. T. Filip
  • P. LeClair
  • C. J. P. Smits
  • J. T. Kohlhepp
  • H. J. M. Swagten
  • B. Koopmans
چکیده

• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website. • The final author version and the galley proof are versions of the publication after peer review. • The final published version features the final layout of the paper including the volume, issue and page numbers.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Magnetoresistance in double spin filter tunnel junctions with nonmagnetic electrodes and its unconventional bias dependence.

Spin filtering happens due to the discriminative tunneling probabilities for spin-up and spin-down electrons through a magnetic barrier and can result in highly spin polarized tunnel currents. Combining two such barriers in a tunnel junction thus leads to large magnetoresistance without the necessity of magnetic electrodes. We demonstrate the realization of such unconventional tunnel junctions ...

متن کامل

Low-resistance spin injection into silicon using graphene tunnel barriers.

Spin manipulation in a semiconductor offers a new paradigm for device operation beyond Moore's law. Ferromagnetic metals are ideal contacts for spin injection and detection, but the intervening tunnel barrier required to accommodate the large difference in conductivity introduces defects, trapped charge and material interdiffusion, which severely compromise performance. Here, we show that singl...

متن کامل

Sub-nanometer atomic layer deposition for spintronics in magnetic tunnel junctions based on graphene spin-filtering membranes.

We report on the successful integration of low-cost, conformal, and versatile atomic layer deposited (ALD) dielectric in Ni–Al2O3–Co magnetic tunnel junctions (MTJs) where the Ni is coated with a spin-filtering graphene membrane. The ALD tunnel barriers, as thin as 0.6 nm, are grown layer-by-layer in a simple, low-vacuum, ozone-based process, which yields high-quality electron-transport barrier...

متن کامل

Electrically tunable spin injector free from the impedance mismatch problem.

Injection of spin currents into solids is crucial for exploring spin physics and spintronics. There has been significant progress in recent years in spin injection into high-resistivity materials, for example, semiconductors and organic materials, which uses tunnel barriers to circumvent the impedance mismatch problem; the impedance mismatch between ferromagnetic metals and high-resistivity mat...

متن کامل

Evidence for electrical spin tunnel injection into silicon

Electrical spin injection into silicon was studied in a ferromagnet/insulator/silicon/insulator/ ferromagnet structure, where the insulator is Si3N4. Si3N4 barriers conduct by hopping conduction at low voltages, but switch to Fowler-Nordheim tunneling at high voltages. In the Fowler-Nordheim tunneling regime a magnetic field dependence of the output current consistent with spin dependent transp...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2017